? semiconductor components industries, llc, 2001 november, 2001 rev. 0 1 publication order number: mbrm120l/d mbrm120l surface mount schottky power rectifier powermite ? power surface mount package the schottky powermite employs the schottky barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage dropreverse current tradeoff. the advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount rectifier. with its unique heatsink design, the powermite has the same thermal performance as the sma while being 50% smaller in footprint area, and delivering one of the lowest height profiles, < 1.1 mm in the industry. because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, pdas and pcmcia cards. typical applications are ac/dc and dcdc converters, reverse battery protection, and aoringo of multiple supply voltages and any other application where performance and size are critical. features: ? low profile maximum height of 1.1 mm ? small footprint footprint area of 8.45 mm2 ? low v f provides higher efficiency and extends battery life ? supplied in 12 mm tape and reel ? low thermal resistance with direct thermal path of die on exposed cathode heat sink mechanical characteristics: ? powermite is jedec registered as do216aa ? case: molded epoxy ? epoxy meets ul94v0 at 1/8 ? weight: 62 mg (approximately) ? device marking: bcf ? lead and mounting surface temperature for soldering purposes. 260 c maximum for 10 seconds maximum ratings please see the table on the following page device package shipping ordering information mbrm120lt1 powermite 3000/tape & reel mbrm120lt3 powermite 12,000/tape & reel schottky barrier rectifier 1.0 amperes 20 volts http://onsemi.com powermite case 457 plastic cathode anode marking diagram bcf = device code m = date code m bcf
mbrm120l http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 20 v average rectified forward current (at rated v r , t c = 135 c) i o 1.0 a peak repetitive forward current (at rated v r , square wave, 100 khz, t c = 135 c) i frm 2.0 a nonrepetitive peak surge current (nonrepetitive peak surge current, halfwave, single phase, 60 hz) i fsm 50 a storage temperature t stg 55 to 150 c operating junction temperature t j 55 to 125 c voltage rate of change (rated v r , t j = 25 c) dv/dt 10,000 v/ s thermal characteristics thermal resistance junctiontolead (anode) (note 1) thermal resistance junctiontotab (cathode) (note 1) thermal resistance junctiontoambient (note 1) r tjl r tjtab r tja 35 23 277 c/w 1. mounted with minimum recommended pad size, pc board fr4, see figures 9 & 10. electrical characteristics maximum instantaneous forward voltage (note 2), see figure 2 v f t j = 25 c t j = 85 c v (i f = 0.1 a) (i f = 1.0 a) (i f = 3.0 a) 0.34 0.45 0.65 0.26 0.415 0.67 maximum instantaneous reverse current (note 2), see figure 4 i r t j = 25 c t j = 85 c ma (v r = 20 v) (v r = 10 v) 0.40 0.10 25 18 2. pulse test: pulse width 250 m s, duty cycle 2%.
mbrm120l http://onsemi.com 3 i r , maximum reverse current (amps) i r , reverse current (amps) i f , instantaneous forward current (amps) i f , instantaneous forward current (amps) figure 1. typical forward voltage figure 2. maximum forward voltage figure 3. typical reverse current figure 4. maximum reverse current 0.1 v f , instantaneous forward voltage (volts) 10 1.0 v f , maximum instantaneous forward voltage (volts) 20 0 v r , reverse voltage (volts) 100e3 10e3 1.0e3 100e6 10e6 1.0e6 v r , reverse voltage (volts) 0.1 0.7 0.3 0.5 0.9 5.0 10 15 20 0 100e+0 10e+0 1.0e+0 100e6 10e6 5.0 10 15 t j = 85 c t j = 150 c t j = 40 c t j = 25 c t j = 150 c t j = 85 c t j = 25 c t j = 150 c t j = 85 c t j = 25 c 0.1 10 1.0 0.1 0.7 0.3 0.5 0.9 t j = 85 c t j = 150 c t j = 25 c 100e3 10e3 1.0e3
mbrm120l http://onsemi.com 4 p fo , average power dissipation (watts) i o , average forward current (amps) i pk /i o = 5 figure 5. current derating figure 6. forward power dissipation 45 75 25 t l , lead temperature ( c) 1.8 1.2 1.0 0.8 0.2 0 i o , average forward current (amps) 0.2 0 0.7 0.6 0.5 0.3 0.1 0 1.0 55 115 105 1.4 0.4 0.8 1.2 1.6 0.4 125 1.6 square wave dc i pk /i o = i pk /i o = 10 i pk /i o = 20 i pk /i o = 20 i pk /i o = 10 i pk /i o = 5 i pk /i o = square wave dc 0.6 0.4 freq = 20 khz 0.6 1.4 0.2 35 65 85 95 t j , derated operating temperature ( c) c, capacitance (pf) figure 7. capacitance figure 8. typical operating temperature derating* 12 0 v r , reverse voltage (volts) 1000 100 10 v r , dc reverse voltage (volts) 10 20 0 95 75 65 6.0 2.0 4.0 8.0 10 12 14 2.0 4.0 8.0 6.0 85 115 125 * reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re- verse voltage conditions. calculations of t j therefore must include forward and reverse power effects. the allowable operating t j may be calculated from the equation: t j = t jmax r(t)(pf + pr) where r(t) = thermal impedance under given conditions, pf = forward power dissipation, and pr = reverse power dissipation this graph displays the derated allowable t j due to reverse bias under dc conditions only and is calculated as t j = t jmax r(t)pr, where r(t) = rthja. for other power applications further calculations must be performed. r tja = 33.72 c/w 119 c/w 277.35 c/w 338 c/w t j = 25 c 20 14 16 18 105 16 18 204 c/w
mbrm120l http://onsemi.com 5 r (t) , transient thermal resistance (normalized) r (t) , transient thermal resistance (normalized) t, time (s) 1.0 0.1 0.01 0.001 100 0.1 0.00001 1,000 0.0001 0.001 0.01 1.0 10 rtjl(t) = rtjl*r(t) 50% 20% 10% 5.0% 2.0% 1.0% figure 9. thermal response junction to lead 100 0.1 0.00001 t, time (s) 1.0 0.1 0.01 0.0001 0.001 0.01 1.0 10 0.001 rtjl(t) = rtjl*r(t) 50% 20% 10% 5.0% 2.0% 1.0% figure 10. thermal response junction to ambient minimum recommended footprint 0.100 2.54 0.025 0.635 0.050 1.27 0.105 2.67 0.030 0.762 inches mm
mbrm120l http://onsemi.com 6 package dimensions powermite plastic package case 45704 issue d dim min max min max inches millimeters a 1.75 2.05 0.069 0.081 b 1.75 2.18 0.069 0.086 c 0.85 1.15 0.033 0.045 d 0.40 0.69 0.016 0.027 f 0.70 1.00 0.028 0.039 h -0.05 +0.10 -0.002 +0.004 j 0.10 0.25 0.004 0.010 k 3.60 3.90 0.142 0.154 l 0.50 0.80 0.020 0.031 r 1.20 1.50 0.047 0.059 s notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a does not include mold flash, protrusions or gate burrs. mold flash, protrusions or gate burrs shall not exceed 0.15 (0.006) per side. s b m 0.08 (0.003) c s t a b s j k t h l j c d s b m 0.08 (0.003) c s t f term. 1 term. 2 r 0.50 ref 0.019 ref
mbrm120l http://onsemi.com 7 notes
mbrm120l http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mbrm120l/d powermite is a registered trademark of and used under a license from microsemi corporation. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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